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4

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SiGe devices / BJT / HBT


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Numerical simulation and comparison of Si BJT's and Si(1-x)Ge(x) HBT's.

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B. Pejcinovic / L.E. Kay / T.W Tang / D.H. Navon

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IEEE Trans. Electron Devices, 36, 2129, 1989


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Low field carrier mobilities measured.  Stained layer mobilities higher than unstrained.