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5

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SiGe Devices / HBT

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Heterojunction bipolar transistors using Si-Ge alloys.

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S.S. Iyer / G.L. Patton / J.M.C. Stork / B.S. Meyerson / D.L. Harame

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IEEE Trans. Electron Devices, 36, 2043, 1989

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Fabrication of these materials and devices is discussed, as well as some electrical charaterization.  Smaller bandgap of SiGe alloys allow for band-engineered structures.  HBT's allow for decoupling of the current gain and intrinsic base resistance.

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IBM, Yorktown Heights.