-- card: 3609 from stack: in
-- bmap block id: 0
-- flags: 0000
-- background id: 2674
-- name: 


-- part contents for background part 3
----- text -----
3

-- part contents for background part 4
----- text -----
SiGe devices / HBT

-- part contents for background part 6
----- text -----
Bandgap and transport properties of Si(1-x)Ge(x) by analysis of nearly ideal Si(1-x)Ge(x)/Si heterojunction bipolar transistors.

-- part contents for background part 7
----- text -----
C.A. King / J.L. Hoyt / J.F. Gibbons

-- part contents for background part 9
----- text -----
IEEE Trans. Electron Devices, 36, 2093, 1989


-- part contents for background part 17
----- text -----
Materials for HBT's grown by limited reaction processing.  Low temperature processing used to preserve material during device processing.  Some electronic properties  of their materials is shown.

-- part contents for background part 8
----- text -----
EE Dept., Stanford.