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2

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SiGe devices

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SiGe resonant tunneling hot-carrier transistor


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S.S. Rhee / G.K. Chang / T.K. Carns / K.L. Wang

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Appl. Phys. Lett., 56, 1061, 1990

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Constructed a 3 terminal hot-hole transistor using double barrier resonant tunneling.  Applications include high speed devices.

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? & EE Dept., UCLA.