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7

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B.W. Sloope / C.O. Tiller

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GOI / Germanium on CaF2

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Microstructure of epitaxial Ge films deposited on (111) CaF2 substrates.


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J. Appl. Phys., 37, 887, 1966

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Investigation of microstructure of Ge film vs growth temperature and rate.  Principal source of defects due to coalescence.  Density of microtwins increased with increasing deposition rate and decreasing temperatures.