-- card: 5078 from stack: in -- bmap block id: 0 -- flags: 0000 -- background id: 2674 -- name: -- part contents for background part 3 ----- text ----- 8 -- part contents for background part 4 ----- text ----- SiGe Superlattices/ Photoluminescence -- part contents for background part 6 ----- text ----- Photoluminescence from Si/Ge superlattices -- part contents for background part 7 ----- text ----- E.A. Montie, G.F.A. van de Walle, D.J. Gravesteijn, A.A. van Gorkum -- part contents for background part 9 ----- text ----- Appl. Phys. Lett., 56, 340, 1990 -- part contents for background part 17 ----- text ----- Grew Si/Ge superlattices of 4 ml/4 ml on a Si1-xGex buffer. Got several samples by not rotating substrate during SL growth. Observed PL at 1.5 microns attributed to SL, and at 1.6 microns attributed to impurities in SL. PL only observed when Ge composition of SL was <= 0.45.