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10

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Si(001) surface/ anneal/ steps/ STM

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Morphology and distribution of atomic steps on Si(001) studied with scanning tunneling microscopy

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D. Dijkkamp, A.J. Hoeven, E.J. van Loenen, J.M. Lenssinck, J. Dieleman

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Appl. Phys. Lett., 56, 39, 1990

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Studied the native oxide removal in vacuum of Si(100) by STM as a function of temperature.  Cleaning at T below 1350K leads to step bunching.  Prefer 1450K.  Get 2 sets of steps depending on terrace, 1 straight and 1 jagged.