Formation conditions and structure of Ge films deposited on polished (111) CaF2 Substrates in an ultrahigh-vacuum system
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B.W. Sloope / C.O. Tiller
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J. Appl. Phys., 36, 3174, 1965
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Determined transition temperature of amorphous Ge to crystalline at various deposition rates. Determined activation energy of 1.43 eV, in agreement of nucleation theory of small clusters. Give 1.53 eV for surface diffusion of Ge on CaF2.