Morphology and distribution of atomic steps on Si(001) studied with scanning tunneling microscopy
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D. Dijkkamp, A.J. Hoeven, E.J. van Loenen, J.M. Lenssinck, J. Dieleman
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Appl. Phys. Lett., 56, 39, 1990
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Studied the native oxide removal in vacuum of Si(100) by STM as a function of temperature. Cleaning at T below 1350K leads to step bunching. Prefer 1450K. Get 2 sets of steps depending on terrace, 1 straight and 1 jagged.