E.A. Montie, G.F.A. van de Walle, D.J. Gravesteijn, A.A. van Gorkum
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Appl. Phys. Lett., 56, 340, 1990
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Grew Si/Ge superlattices of 4 ml/4 ml on a Si1-xGex buffer. Got several samples by not rotating substrate during SL growth. Observed PL at 1.5 microns attributed to SL, and at 1.6 microns attributed to impurities in SL. PL only observed when Ge composition of SL was <= 0.45.